Capacitance hysteresis in GaN/AlGaN heterostructures

نویسندگان

  • L. E. Byrum
  • G. Ariyawansa
  • R. C. Jayasinghe
  • N. Dietz
  • A. G. U. Perera
  • S. G. Matsik
  • I. T. Ferguson
  • A. Bezinger
  • H. C. Liu
چکیده

L. E. Byrum, G. Ariyawansa, R. C. Jayasinghe, N. Dietz, A. G. U. Perera, S. G. Matsik, I. T. Ferguson, A. Bezinger, and H. C. Liu Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA NDP Optronics LLC, Mableton, Georgia 30126, USA School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30032, USA Institute for Microstructural Sciences, National Research Council, Ottawa K1A 0R6, Canada

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale.

Vertical heterostructures combining two or more graphene (Gr) layers separated by ultra-thin insulating or semiconductor barriers represent very promising systems for next generation electronics devices, due to the combination of high speed operation with wide-range current modulation by a gate bias. They are based on the specific mechanisms of current transport between two-dimensional-electron...

متن کامل

Vertical Electron Transport in GaN/AlGaN Heterostructures

Nonequilibrium dc and large-signal ac vertical electron transport in GaN/AlGaN heterostructures is investigated by Monte Carlo simulations. The symmetric two-barrier GaN/AlGaN heterostructures are studied. The results of simulations show that polarization charges have a profound effect on dc and large-signal ac characteristics of vertical electron transport in GaN/AlGaN heterostructures. Under ...

متن کامل

Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors.

We report the rational synthesis of dopant-free GaN/AlN/AlGaN radial nanowire heterostructures and their implementation as high electron mobility transistors (HEMTs). The radial nanowire heterostructures were prepared by sequential shell growth immediately following nanowire elongation using metal-organic chemical vapor deposition (MOCVD). Transmission electron microscopy (TEM) studies reveal t...

متن کامل

Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures

We have evaluated the tunneling contact resistivity based on numerical calculation of tunneling current density across an AlGaN barrier layer in non-polar AlGaN/GaN heterostructures. In order to reduce the tunneling contact resistivity, we have introduced an n-AlXGa1−XN layer between an n-GaN cap layer and an i-AlGaN barrier layer. The tunneling contact resistivity has been optimized by varying...

متن کامل

Abstract Submitted for the MAR13 Meeting of The American Physical Society Comparative Study on Intersubband Absorption in AlGaN/GaN and AlInN/GaN Heterostructures Grown on Low-Defect Substrates

Submitted for the MAR13 Meeting of The American Physical Society Comparative Study on Intersubband Absorption in AlGaN/GaN and AlInN/GaN Heterostructures Grown on Low-Defect Substrates COLIN EDMUNDS, LIANG TANG, JIAYI SHAO, DONGHUI LI, GEOFF GARDNER, MICHAEL MANFRA, OANA MALIS, Purdue University, ANDREW GRIER, ZORAN IKONIC, PAUL HARRISON, University of Leeds, DIMITRI ZAKHAROV, Brookhaven Nation...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2009